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Osten et al., 2008 - Google Patents

Epitaxial Lanthanide Oxide based Gate Dielectrics

Osten et al., 2008

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Document ID
2982476279634495236
Author
Osten H
Laha A
Fissel A
Publication year
Publication venue
MRS Online Proceedings Library

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Snippet

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source …
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