Nothing Special   »   [go: up one dir, main page]

Gerfin et al., 1994 - Google Patents

Growth of iridium films by metal organic chemical vapour deposition

Gerfin et al., 1994

Document ID
2378511906698269488
Author
Gerfin T
Hälg W
Atamny F
Dahmen K
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

Thin films of metallic iridium were grown by thermal metal organic chemical vapour deposition in a horizontal hot-wall reactor. The new solid compound Ir (2, 2, 6, 6-tetramethyl- 3, 5-heptadione)(1, 5-cyclooctadiene) was used as the iridium source. Evaporation rate …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00Metallocenes
    • C07F17/02Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/22Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of gaseous or liquid organic compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic System
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic System

Similar Documents

Publication Publication Date Title
Gerfin et al. Growth of iridium films by metal organic chemical vapour deposition
KR100727372B1 (en) Ruthenium complex, manufacturing process thereof and the method for forming thin-film using the complex
Shin et al. Hot-wall chemical vapor deposition of copper from copper (I) compounds. 2. Selective, low-temperature deposition of copper from copper (I). beta.-diketonate compounds,(. beta.-diketonate) CuLn, via thermally induced disproportionation reactions
JP5375093B2 (en) Organic ruthenium complex and method for producing ruthenium thin film using the ruthenium complex
EP1814892B1 (en) Organometallic compounds and processes for preparation thereof
Hierso et al. Platinum, palladium and rhodium complexes as volatile precursors for depositing materials
EP0920435A1 (en) Platinum source compositions for chemical vapor deposition of platinum
KR20010074855A (en) Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
Chi et al. MOCVD of Silver Thin Films from the (1, 1, 1, 5, 5, 5‐Hexafluoro‐2, 4‐pentanedionato)‐silver [bis (trimethylsilyl) acetylene] Complex
US6809212B2 (en) Method for producing organometallic compounds
Devi et al. A novel Cu (II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition
JP2006057112A (en) Chemical vapor deposition method
KR101770438B1 (en) Ruthenium complex mixture, method for producing same, composition for forming film, ruthenium-containing film and method for producing same
Shyu et al. Iron sulfide films via Fe2 (CO) 6 (μ-S2) as a MOCVD single source precursor
Gordon et al. Synthesis and characterization of ruthenium amidinate complexes as precursors for vapor deposition
Smith et al. Low-temperature chemical vapor deposition of rhodium and iridium thin films
JP3379315B2 (en) Raw materials for forming platinum thin films by metal organic chemical vapor deposition
KR100399604B1 (en) Formation of ru/ruo2 film
Plappert et al. Deposition of amorphous titanium oxide films using alkoxy (pyrazolylborate) titanium (IV) compounds
JPH09509187A (en) Method for precipitating nickel and / or nickel oxide from vapor phase and novel nickel compound having stable evaporation property
JP4059662B2 (en) Copper raw material for chemical vapor deposition and method for producing thin film using the same
KR20220018546A (en) Methods of making metal or semimetal-containing films
KR100530706B1 (en) Platinum feed composition for chemical vapor deposition of platinum
JP2762917B2 (en) Material and method for forming platinum film by metal organic chemical vapor deposition
KR100600468B1 (en) Process for producing cycloalkene copper precursors