Li et al., 2014 - Google Patents
Solution-processable low-voltage and flexible floating-gate memories based on an n-type polymer semiconductor and high-k polymer gate dielectricsLi et al., 2014
View PDF- Document ID
- 17717910488769491847
- Author
- Li J
- Yan F
- Publication year
- Publication venue
- ACS applied materials & interfaces
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High-performance low-voltage flash memories based on organic floating-gate field-effect transistors are prepared by a solution process for the first time. Transistors with a high- mobility n-type polymer semiconductor, poly {[N, N′-bis (2-octyldodecyl) naphthalene-1, 4 …
- 229920000642 polymer 0 title abstract description 170
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- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0034—Organic polymers or oligomers
- H01L51/0035—Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
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