Nothing Special   »   [go: up one dir, main page]

Bäumer et al., 2018 - Google Patents

Redox-based memristive metal-oxide devices

Bäumer et al., 2018

Document ID
17666674445256454600
Author
Bäumer C
Dittmann R
Publication year
Publication venue
Metal oxide-based thin film structures

External Links

Snippet

In this chapter, we introduce the reversible, nonvolatile change in electrical resistance of transition metal oxide interfaces known as resistive switching. This effect occurs driven by the application of external voltage stimuli and can be ascribed to electrically induced redox …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/145—Oxides or nitrides
    • H01L45/146—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12—Details
    • H01L45/122—Device geometry
    • H01L45/1233—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/16—Manufacturing
    • H01L45/1608—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/141—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/08—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/06—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements comprising metal oxide memory material, e.g. perovskites

Similar Documents

Publication Publication Date Title
Dittmann et al. Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Kumar et al. Metal oxide resistive switching memory: materials, properties and switching mechanisms
Waser Redox-based resistive switching memories
Gao et al. Memristor modeling: challenges in theories, simulations, and device variability
Zhang et al. Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in Pt/TiO2/Ti/Pt nanosized ReRAM devices
Pan et al. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
Munjal et al. Advances in resistive switching based memory devices
Valov et al. Electrochemical metallization memories—fundamentals, applications, prospects
Ielmini Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Yan et al. Resistance switching memory in perovskite oxides
Khan et al. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
Waser et al. Introduction to new memory paradigms: memristive phenomena and neuromorphic applications
Chen et al. SiO 2 based conductive bridging random access memory
Janod et al. Resistive switching in Mott insulators and correlated systems
Yang et al. Memristive devices for computing
Ielmini et al. Thermochemical resistive switching: materials, mechanisms, and scaling projections
Fujisaki Current status of nonvolatile semiconductor memory technology
Bäumer et al. Redox-based memristive metal-oxide devices
Jeong et al. Emerging memories: resistive switching mechanisms and current status
Wei et al. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
Akinaga Recent advances and future prospects in functional-oxide nanoelectronics: the emerging materials and novel functionalities that are accelerating semiconductor device research and development
Mickel et al. Memristive switching: physical mechanisms and applications
Waser et al. Introduction to nanoionic elements for information technology
Younis et al. Microscopic investigations of switching phenomenon in memristive systems: a mini review
Tian et al. Recent development of studies on the mechanism of resistive memories in several metal oxides