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Osten et al., 2009 - Google Patents

Growth of epitaxial lanthanide oxide based gate dielectrics

Osten et al., 2009

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Document ID
17578206520737476464
Author
Osten H
Laha A
Bugiel E
Schwendt D
Fissel A
Publication year
Publication venue
2009 3rd International Conference on Signals, Circuits and Systems (SCS)

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Many materials systems are currently under consideration as potential replacements for SiO 2 as the gate dielectric material for sub-0.1¿ m CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source …
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