Carson et al., 1993 - Google Patents
Dielectric optical waveguide sensors integrated with GaAs active devicesCarson et al., 1993
- Document ID
- 16341842167826909526
- Author
- Carson R
- Casalnuovo S
- Sinclair M
- Publication year
- Publication venue
- Optical Materials Reliability and Testing: Benign and Adverse Environments
External Links
Snippet
Dielectric optical waveguides exhibit properties that are well suited to sensor applications. They have low refractive index and are transparent to a wide range of wavelengths. They can react with the surrounding environment in a variety of controllable ways. In certain …
- 230000003287 optical 0 title abstract description 28
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infra-red, visible, or ultra-violet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infra-red, visible, or ultra-violet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infra-red, visible, or ultra-violet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101503617B1 (en) | Two-photon-absorption-based silicon waveguide photo-power monitor | |
Wanser | Fundamental phase noise limit in optical fibres due to temperature fluctuations | |
US4515430A (en) | Integrated optical transducers | |
US8768132B2 (en) | Ridge waveguide | |
US10222294B2 (en) | Wafer level testing of optical devices | |
US20120154812A1 (en) | Cmos moems sensor device | |
US20110295511A1 (en) | Apparatus and method for detecting the presence of an agent | |
Hoffman et al. | The effect of gamma radiation exposure on active silicon photonic device performance metrics | |
Goldberg et al. | Near-field optical studies of semiconductor heterostructures and laser diodes | |
EP0582587A1 (en) | Vertical metallically loaded polarization splitter and polarization-diversified optical receiver. | |
Carson et al. | Dielectric optical waveguide sensors integrated with GaAs active devices | |
Trommer | Monolithic InGaAs photodiode array illuminated through an integrated waveguide | |
Acerbi et al. | Monolithically integrated SiON photonic circuit and silicon single-photon detectors for NIR-range operation | |
Yanikgonul et al. | High-speed waveguide-integrated avalanche photodiodes for near-infrared wavelengths on SiN-on-SOI photonic platform | |
Callender et al. | Optical signal distribution to MSM photodetector arrays via integrated polyimide waveguides | |
Robitaille et al. | Integration of optoelectronic switch matrices using metal-semiconductor-metal photodetectors and polyimide waveguide circuitry | |
Solgaard et al. | All-silicon integrated optical modulator | |
Miura et al. | Novel quick and precise method for evaluating optical characteristics | |
Cites et al. | Integration of nonlinear optical polymer waveguides with InGaAs p‐i‐n photodiodes | |
Caldararu et al. | Silicon photodiode-waveguide coupling—Two-dimensional modelling, software simulation and experiments | |
Höpker et al. | Integrated transition edge sensors on lithium niobate waveguides | |
Callender et al. | Optimization of metal-semiconductor-metal (MSM) photodetector arrays integrated with polyimide waveguides | |
US11340401B2 (en) | Optical circuit for alignment and optical alignment method | |
Kuhara et al. | Characterization and theoretical analysis of second-order intermodulation distortion of InGaAs/InP pin photodiode modules for fiber-optic CATV | |
Sturm et al. | Integrated photodiodes in standard BiCMOS technology |