Nothing Special   »   [go: up one dir, main page]

Dao et al., 2010 - Google Patents

Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology

Dao et al., 2010

View PDF
Document ID
15964898580909715171
Author
Dao D
Nakamura K
Bui T
Sugiyama S
Publication year
Publication venue
Advances in Natural Sciences: Nanoscience and Nanotechnology

External Links

Snippet

MEMS (micro-electro-mechanical systems) technology has undergone almost 40 years of development, with significant technology advancement and successful commercialization of single-functional MEMS devices, such as pressure sensors, accelerometers, gyroscopes …
Continue reading at iopscience.iop.org (PDF) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions

Similar Documents

Publication Publication Date Title
Dao et al. Micro/nano-mechanical sensors and actuators based on SOI-MEMS technology
Gerlach et al. Introduction to microsystem technology: a guide for students
Zhang et al. In situ electron microscopy mechanical testing of silicon nanowires using electrostatically actuated tensile stages
Brookhuis et al. Six-axis force–torque sensor with a large range for biomechanical applications
Vetrivel et al. Design and optimization of a doubly clamped piezoresistive acceleration sensor with an integrated silicon nanowire piezoresistor
Sankar et al. A very-low cross-axis sensitivity piezoresistive accelerometer with an electroplated gold layer atop a thickness reduced proof mass
Komati et al. Prototyping of a highly performant and integrated piezoresistive force sensor for microscale applications
Zeng et al. In situ SEM electromechanical characterization of nanowire using an electrostatic tensile device
Gholamzadeh et al. Design, simulation and fabrication of a MEMS accelerometer by using sequential and pulsed-mode DRIE processes
Shaby et al. Enhancing the performance of mems piezoresistive pressure sensor using germanium nanowire
Tasdemir et al. A deep etching mechanism for trench-bridging silicon nanowires
Su et al. A review: crystalline silicon membranes over sealed cavities for pressure sensors by using silicon migration technology
Yilmazoglu et al. A nano-microstructured artificial-hair-cell-type sensor based on topologically graded 3D carbon nanotube bundles
Hu et al. Design and research on large displacement bidirectional MEMS stage with interlock mechanism
Amarasinghe et al. Simulation, fabrication and characterization of a three-axis piezoresistive accelerometer
Lamba et al. Graphene piezoresistive flexible MEMS force sensor for bi-axial micromanipulation applications
Pakzad et al. Simplified top-down fabrication of sub-micron silicon nanowires
Tung et al. A micromirror with CNTs hinge fabricated by the integration of CNTs film into a MEMS actuator
Messina et al. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors
Nonomura et al. SOI rate gyro sensor for automotive control
Nakamura et al. First-principles simulation on orientation dependence of piezoresistance properties in silicon nanowires
Tan et al. Three-axis piezoresistive accelerometer with uniform axial sensitivities
Kim et al. A new simple fabrication method for silicon nanowire-based accelerometers
Hoffmann Smart Materials: Proceedings of the 1st Caesarium, Bonn, November 17–19, 1999
Chang et al. Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor