Nothing Special   »   [go: up one dir, main page]

Krueger, 1999 - Google Patents

Dual-column (FIB–SEM) wafer applications

Krueger, 1999

Document ID
15178755303678467446
Author
Krueger R
Publication year
Publication venue
Micron

External Links

Snippet

The enhanced capabilities of a dual-column system are quickly becoming realized by the semiconductor industry for performing a wide range of applications on full wafer samples. A dual-column system integrates the capabilities of an electron column for scanning electron …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a micro-scale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching

Similar Documents

Publication Publication Date Title
Krueger Dual-column (FIB–SEM) wafer applications
McCaffrey et al. Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
Giannuzzi et al. A review of focused ion beam milling techniques for TEM specimen preparation
US10546719B2 (en) Face-on, gas-assisted etching for plan-view lamellae preparation
Stevie et al. Applications of focused ion beams in microelectronics production, design and development
Jublot et al. Sample preparation by focused ion beam micromachining for transmission electron microscopy imaging in front-view
Ohnishi et al. A new focused ion beam microsampling technique for TEM observation of site-specific areas
Huang Combining Ar ion milling with FIB lift‐out techniques to prepare high quality site‐specific TEM samples
US7317188B2 (en) TEM sample preparation from a circuit layer structure
Young et al. Dual-beam (FIB-SEM) systems: techniques and automated applications
US6884362B2 (en) Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
Lepinay et al. Three-dimensional semiconductor device investigation using focused ion beam and scanning electron microscopy imaging (FIB/SEM tomography)
US5940678A (en) Method of forming precisely cross-sectioned electron-transparent samples
Xia et al. Enhancement of XeF2-assisted gallium ion beam etching of silicon layer and endpoint detection from backside in circuit editing
Altmann et al. Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology
Li Advanced techniques in TEM specimen preparation
Herlinger et al. TEM sample preparation using a focused ion beam and a probe manipulator
Rai et al. Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis
Nakahara Recent development in a TEM specimen preparation technique using FIB for semiconductor devices
Longo et al. Development of a focused ion beam (FIB) technique to minimize X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) of FIB specimens in the transmission electron microscope (TEM)
Dai et al. Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact
Young et al. High-yield and high-throughput TEM sample preparation using focused ion beam automation
JP7113613B2 (en) defect analysis
Tuggle et al. Electron backscatter diffraction of Nb3Sn coated niobium: Revealing structure as a function of depth
Giannuzzi et al. FIB lift-out for defect analysis