Nothing Special   »   [go: up one dir, main page]

Murashima et al., 1989 - Google Patents

Electrical conductivity of plasma-polymerized organic thin films: Influence of plasma polymerization conditions and surface composition

Murashima et al., 1989

Document ID
14745346726682351861
Author
Murashima M
Tanaka K
Yamabe T
Publication year
Publication venue
Synthetic metals

External Links

Snippet

An attempt has been made to prepare plasma-polymerized organic thin films with considerably high electrical conductivity at room temperature without doping. As the starting monomer, 3, 4, 9, 10-perylenetetra-carboxylic dianhydride (PTCDA) was specifically used …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Similar Documents

Publication Publication Date Title
Biederman et al. Plasma polymer films and their future prospects
Hammer et al. Synthesis of carbon nitride films at low temperatures
Santra et al. Copper oxide thin films grown by plasma evaporation method
Anttila et al. Superior attachment of high‐quality hydrogen‐free amorphous diamond films to solid materials
Wei et al. TEM, XPS and FTIR characterization of sputtered carbon nitride films
Wang A new development in covalently bonded carbon nitride and related materials
Li et al. Surface modification of UHSPE fibers through allylamine plasma deposition. I. Infrared and ESCA study of allylamine plasma formed polymers
Memming Properties of polymeric layers of amorphous hydrogenated carbon produced by a plasma-activated chemical vapour deposition process I: Spectroscopic investigations
Johansson et al. Microstructure of BN: C films deposited on Si substrates by reactive sputtering from a B4C target
Murashima et al. Electrical conductivity of plasma-polymerized organic thin films: Influence of plasma polymerization conditions and surface composition
Tanabe et al. Characterization and modification of amorphous carbon films consisting of sp2 and sp3 bonds using magneto-plasma dynamic arc-jet
Richter et al. Preparation and properties of amorphous carbon and hydrocarbon films
Reynaud et al. Valence electronic structure of a thin film of polyacrylonitrile and its pyrolized derivatives
JPH02213474A (en) Manufacture of thin molybdenum sulfide film, manufacture of molybdenum sulfide film and self-lubricating layer, electro-optical layer, and catalytically acting layer
Kim et al. Structural properties of amorphous carbon nitride films prepared by remote plasma-enhanced chemical vapor deposition
Biederman et al. Deposition of composite metal/C: H films—the basic properties of Ag/C: H
Wu et al. Further investigation of the preparation process of poly (p-phenylenevinylene) Langmuir-Blodgett films
Jin et al. Characterization of silicon oxide gas barrier films with controlling to the ion current density (ion flux) by plasma enhanced chemical vapor deposition
Chen et al. Effect of temperature on carbon nitride films synthesized by ion-beam-assisted pulsed laser deposition
Wrobel et al. Preparation, structure, and some properties of organosilicon thin polymer films obtained by plasma polymerization
Bhattacharyya et al. Valence band spectra of nitrogen incorporated amorphous carbon films
Fabisiak et al. RF Plasma deposited amorphous carbon films electronic and optical properties
Yudasaka et al. Metal phthalocyanine polymer film formation by the double source evaporation of tetracyanobenzene and metal
Kobayashi et al. Nitrogen‐ion irradiation during the deposition of C1− x N x thin films by ion beam sputtering technique
JPH10249986A (en) Transparent gas barrier film