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Wendel et al., 1992 - Google Patents

Thin zirconium nitride films prepared by plasma-enhanced CVD

Wendel et al., 1992

Document ID
1413213047588665636
Author
Wendel H
Suhr H
Publication year
Publication venue
Applied Physics A

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Snippet

Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis (diethylamido) zirconium, Zr [N (C 2 H 5) 2] 4 as precursor. The influence of the various experimental parameters on film properties and deposition rates has …
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