Wang et al., 2011 - Google Patents
A wideband anti-high-overload thermoelectric microwave power sensor based on GaAs MMIC technologyWang et al., 2011
- Document ID
- 14130397565595568880
- Author
- Wang D
- Liao X
- Publication year
- Publication venue
- 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
External Links
Snippet
In this work, a wideband anti-high-overload thermoelectric microwave power sensor based on GaAs MMIC technology is proposed to overcome the deficiency of poor overload and easy burning. This power sensor contains two sections: the microwave power measurement …
- 229910001218 Gallium arsenide 0 title abstract description 14
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wang et al. | A thermoelectric power sensor and its package based on MEMS technology | |
Wang et al. | Optimization of indirectly-heated type microwave power sensors based on GaAs micromachining | |
Zhang et al. | A thermocouple-based self-heating RF power sensor with GaAs MMIC-compatible micromachining technology | |
Chu et al. | Improved dynamic range of microwave power sensor by MEMS cantilever beam | |
Yi et al. | A cascaded terminating-type and capacitive-type power sensor for− 10-to 22-dBm application | |
Wang et al. | A terminating-type MEMS microwave power sensor and its amplification system | |
Hua et al. | X-band microwave phase detector manufactured using GaAs micromachining technologies | |
Wang et al. | An in-line microwave power detection system based on double MEMS cantilever beams | |
Chu et al. | X-band monolithic microwave integrated detector based on MEMS thermoelectric power sensor | |
Wang et al. | A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology | |
Zhang et al. | Characteristics of doped n+ GaAs thermopile-based RF MEMS power sensors for MMIC applications | |
Wang et al. | A wideband anti-high-overload thermoelectric microwave power sensor based on GaAs MMIC technology | |
Han et al. | A microwave power sensor based on GaAs MMIC technology | |
Cui et al. | A novel microwave power sensor using MEMS fixed-fixed beam | |
Xin et al. | A high-performance dual-channel MEMS microwave power sensor with cantilever beam | |
Wang et al. | Thermoelectric power detector for microwave application at X-band based on GaAs MMIC technology | |
Zhang et al. | A high-performance RF MEMS power sensor for near-zero detection applications | |
Yan et al. | An integrated microwave detector based on MEMS technology for X-band application | |
Yan et al. | A Four-Port Microwave Phase Detector at $ X $-Band Based on MEMS Power Sensors | |
Yi et al. | A high dynamic range power sensor based on GaAs MMIC process and MEMS technology | |
Wang et al. | Research on a Ka‐Band MEMS Power Sensor Investigated with an MEMS Cantilever Beam | |
Yi et al. | Reliability improvement of the cascaded power sensor based on MIM capacitor | |
Zhang et al. | An insertion thermoelectric RF MEMS power sensor for GaAs MMIC-compatible applications | |
Zhang et al. | A near-zero thermoelectric RF power sensor for high dynamic range applications | |
Li et al. | A new RF-thermal-electric power detector with high sensitivity and inherent linearity in 0.18-μm CMOS technology |