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Polignano et al., 1987 - Google Patents

The Role of Oxygen in Silicon p–n Junction Gettering

Polignano et al., 1987

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Document ID
12049170451111174028
Author
Polignano M
Cerofolini G
Bender H
Claeys C
Reffle J
Publication year
Publication venue
physica status solidi (a)

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Snippet

The preannealing steps are investigated at high (HI) and low (LO) temperatures for internal gettering in medium oxygen content silicon slices [(7±1.5)× 1017 oxygen atoms/cm3]. By using silicon p–n junctions as test vehicles the following conclusions are made: 1) LO–HI …
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