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Okuyama et al., 2000 - Google Patents

Low-temperature preparation of SrxBi2+ yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to metal–ferroelectric–insulator–semiconductor …

Okuyama et al., 2000

Document ID
10135941771230020882
Author
Okuyama M
Sugiyama H
Noda M
Publication year
Publication venue
Applied surface science

External Links

Snippet

Preferentially (105)-oriented SrxBi2+ yTa2O9 (SBT) thin films on Pt, SiO2/n-Si and SiNx/SiO2/n-Si have been prepared at low temperature in O2 by pulsed laser deposition. Excess Bi promotes crystallization of the film. The crystalline films have been obtained on Pt …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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