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Tsujimoto et al., 2012 - Google Patents

TiO2 surface treatment effects by Mg2+, Ba2+, and Al3+ on Sb2S3 extremely thin absorber solar cells

Tsujimoto et al., 2012

Document ID
9576067107369233753
Author
Tsujimoto K
Nguyen D
Ito S
Nishino H
Matsuyoshi H
Konno A
Kumara G
Tennakone K
Publication year
Publication venue
The Journal of Physical Chemistry C

External Links

Snippet

Sb2S3-based extremely thin absorber (ETA) solar cells of structure,, was fabricated with porous TiO2 surface treating by Mg2+, Ba2+, and Al3+ to be full-inorganic printed solar cells. The fabrication parameters of the ETA structure were optimized and the photovoltaic …
Continue reading at pubs.acs.org (other versions)

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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/54—Material technologies
    • Y02E10/542—Dye sensitized solar cells
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/543—Solar cells from Group II-VI materials
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    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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    • H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier

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