Nothing Special   »   [go: up one dir, main page]

Zhou et al., 2004 - Google Patents

An improved driving and protection circuit for reverse blocking IGBT

Zhou et al., 2004

Document ID
8389898462270968404
Author
Zhou D
Liu Z
Kong P
Sun K
Huang L
Sasagawa K
Publication year
Publication venue
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No. 04CH37551)

External Links

Snippet

An improved driving and protection circuit for reverse blocking IGBT (RB-IGBT) is proposed in this paper. This scheme can reduce the RB-IGBT switching transition substantially without causing the increase of di/dt in turn-on transition and dv/dt in turn-off transition. The drive …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using bipolar transistors
    • H03K17/62—Switching arrangements with several input- or output-terminals
    • H03K17/6257—Switching arrangements with several input- or output-terminals with several inputs only combined with selecting means
    • H03K17/6264—Switching arrangements with several input- or output-terminals with several inputs only combined with selecting means using current steering means
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output circuit to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output circuit to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching

Similar Documents

Publication Publication Date Title
US10911045B1 (en) Segmented direct gate drive circuit of a depletion mode GaN power device
John et al. High-performance active gate drive for high-power IGBT's
CN110838787B (en) SiC MOSFET active driving circuit for improving driving performance
US7768337B2 (en) IGBT-driver circuit for desaturated turn-off with high desaturation level
JP3736227B2 (en) Drive circuit
US6459324B1 (en) Gate drive circuit with feedback-controlled active resistance
CN111211762B (en) SiC MOSFET driving circuit with high turn-on performance
JP3447949B2 (en) Gate drive circuit and power converter for insulated gate semiconductor device
WO2008041685A1 (en) Gate drive circuit
US20180191339A1 (en) Gate Driver Controlling a Collector to Emitter Voltage Variation of an electronic Switch and Circuits Including the Gate Driver
KR102026931B1 (en) Short circuit protection for power switch
Zhou et al. A gate driver of SiC MOSFET with passive triggered auxiliary transistor in a phase-leg configuration
CN115173676B (en) SiC MOSFET driving circuit for inhibiting overshoot peak
Rouger et al. Modular multilevel SOI-CMOS active gate driver architecture for SiC MOSFETs
CN116155252A (en) IGBT grid driving circuit
Sakano et al. Ultra-low switching loss triple-gate controlled IGBT
Zhang et al. A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy
Papadopoulos et al. BIGT control optimisation for overall loss reduction
KR20130037172A (en) Semiconductor device
Zhou et al. An improved driving and protection circuit for reverse blocking IGBT
JP2018088728A (en) Gate drive circuit
JP2002135097A (en) Semiconductor device and module thereof
Bohlländer et al. Desaturated switching of trench-fieldstop IGBTs
CN115314038A (en) Gate-level buffer circuit based on SiC power device
JP6004988B2 (en) Gate control device for power semiconductor device