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Uesugi et al., 2018 - Google Patents

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Uesugi et al., 2018

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Document ID
4239348357869142006
Author
Uesugi K
Shindome A
Kajiwara Y
Yonehara T
Kato D
Hikosaka T
Kuraguchi M
Nunoue S
Publication year
Publication venue
physica status solidi (a)

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In this work, a thermal treatment technique under NH3 ambient for the recess surface of GaN‐ MOSFETs is developed. Immediately following the fabrication process of the recess, the bottoms of these structures have rough surfaces and step‐terrace structures cannot be …
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