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Ennen et al., 1985 - Google Patents

1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

Ennen et al., 1985

Document ID
4122140729217368767
Author
Ennen H
Pomrenke G
Axmann A
Eisele K
Haydl W
Schneider J
Publication year
Publication venue
Applied Physics Letters

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Snippet

The feasibility of producing erbium‐doped silicon light‐emitting diodes by molecular beam epitaxy is demonstrated. The p‐n junctions are formed by growing an erbium‐doped p‐type epitaxial silicon layer on an n‐type silicon substrate. When the diodes are biased in the …
Continue reading at pubs.aip.org (other versions)

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