Abstract
A simple optoelectronic bistability that can be realized in optically gated GaP light emitting diodes is reported. Three functions—current, photoemission intensity, and peak wavelength—showed bistable characteristics.
© 1988 Optical Society of America
PDF ArticleMore Like This
M. S. Choi, J. H. Hur, and Martin A. Gundersen
FBB8 OSA Annual Meeting (FIO) 1988
M. S. CHOI, J. H. HUR, S. D. TSIAPALAS, and M. A. GUNDERSEN
TUJ36 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989
Matthew Mitchell, Aaron C. Hryciw, and Paul E. Barclay
SF1M.3 CLEO: Science and Innovations (CLEO:S&I) 2014