Citation
L. Treitinger, A. Felder, M. Kerber, T. F. Meister, E. Bertagnolli, P. Weger, R. Mahnkopf, S. Marksteiner, R. Köpl, R. Schreiter, J. Popp, H. M. Rein, J. Hauenschild, and L. Schmidt, "Silicon bipolar technology and circuits for optical communications at data rates above 10 GBit/s," in Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, Vol. 4 of 1993 OSA Technical Digest Series (Optica Publishing Group, 1993), paper FF3.https://opg.optica.org/abstract.cfm?URI=OFC-1993-FF3
Abstract
The aim of this paper is twofold. First, it will describe the results on a chip set with data rates as high as 32 Gbit/s, that is fabricated in a preproduction 0.8-µm silicon bipolar technology. Second, it will describe the present and near-future perspectives of silicon technology for homo- and heterojunction devices in terms of higher operating speeds, lower power consumption, lower noise figures, and new functions such as OEIC’s.
© 1993 Optical Society of America
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