Abstract
A lithography-free, self-assembly fabrication route exploiting black silicon (B-Si) microstructures to design a perfect absorber based on densely and disordered packed gold nanoparticles (AuNPs)-modified silicon forests have been proposed in this paper. The geometrical dimensions of microstructures were controlled by altering the flow rate of SF6/O2 in the reactive ion etching (RIE) chamber. The RIE B-Si shows a unique geometry that consists of a combination of sharp “needles” at the top and rounded “holes” at the bottom, and also shows an excellent adaptive relationship with Au deposition. By combining the light-trapping capability of the B-Si and the plasmonic nature of AuNPs in the near-infrared (NIR) range, an experimental absorption of 96.5% is achieved in a wide range from 350 to 2500 nm. This material has the potential for photonic applications, including solar energy harvesting or NIR-sensitive optoelectronic devices.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant Nos. 61734002, 61435010, 61177035 and 61421002). The author would also like to thank Xiuwei Yang and Anbo Yuan for their help in RIE and SEM analysis, and the State Key Laboratory of Electronic Thin Films and Integrated Devices in China, for their help and equipment support.
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Song, Y., Liu, T., Liu, S. et al. A plasmon-enhanced broadband absorber fabricated by black silicon with self-assembled gold nanoparticles. J Mater Sci: Mater Electron 31, 4696–4701 (2020). https://doi.org/10.1007/s10854-020-03025-2
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DOI: https://doi.org/10.1007/s10854-020-03025-2