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Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips

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Abstract

Computation-in-memory (CIM) chips offer an energy-efficient approach to artificial intelligence computing workloads. Resistive random-access memory (RRAM)-based CIM chips have proven to be a promising solution for overcoming the von Neumann bottleneck. In this paper, we review our recent studies on the architecture-circuit-technology co-optimization of scalable CIM chips and related hardware demonstrations. To further minimize data movements between memory and computing units, architecture optimization methods have been introduced. Then, we propose a device-architecture-algorithm co-design simulator to provide guidelines for designing CIM systems. A physics-based compact RRAM model and an array-level analog computing model were embedded in the simulator. In addition, a CIM compiler was proposed to optimize the on-chip dataflow. Finally, research perspectives are proposed for future development.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 92064001, 62025111, 92264201) and Beijing Advanced Innovation Center for Integrated Circuits.

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Correspondence to Bin Gao.

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Liu, Y., Gao, B., Tang, J. et al. Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips. Sci. China Inf. Sci. 66, 200408 (2023). https://doi.org/10.1007/s11432-023-3785-8

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  • DOI: https://doi.org/10.1007/s11432-023-3785-8

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