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Abstract: For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools.
Abstract: For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools.
Dec 11, 2017 · PDF | On Sep 1, 2017, T. Schram and others published WS2 transistors on 300 mm wafers with BEOL compatibility | Find, read and cite all the ...
WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools and this novel low-temperature flow is promising.
The Plasma Enhanced Atomic Layer Deposition publication database entry for 'WS2 transistors on 300 mm wafers with BEOL compatibility' at plasma-ald.com.
Incorporating a back-gate on a wafer-scale makes it difficult (or impossible) to control the electrostatics of each transistor's gate independently.
We demonstrate an integrated process flow on full 300mm wafers with monolayer WS2 channel. WS2 is a 2D semiconductor from the transition metal dichalcogenide ...
Feb 27, 2023 · Additionally, 2D FETs can be integrated in the back-end-of-line (BEOL) ... WS2 transistors on 300 mm wafers with BEOL compatibility. Eur. Solid ...
Dec 6, 2021 · WS2 transistors on 300 mm wafers with BEOL compatibility. 2017 47th European Solid-State Device Research Conference (ESSDERC); September ...
WS2 transistors on 300 mm wafers with BEOL compatibility. T Schram, Q Smets ... BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line.