The SOI LGWM FinFET shows nearly 39% less shift in threshold voltage as compared to bulk LGWM FinFET after 2000 krad dose. From the curve it is observed that ...
This article gives complete overview of total ionizing dose effect of linear gate workfunction modulated bulk and SOI P-FinFET.
Jul 1, 2023 · The effect total ionizing dose on a linear gate workfunction modulated SOI P-FinFET is analyzed and compared with the bulk P-FinFET.
Abstract: The total ionizing dose effects of bulk and SOI p-FinFET with linear workfunction modulated (LWM) is presented and investigated.
Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology · List of references · Publications that cite this publication.
The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction modulation is presented and evaluated. The gate metal workfunction is ...
Abstract: The total ionizing dose effects of bulk and SOI p-FinFET with linear workfunction modulated (LWM) is presented and investigated. The gate metal ...
The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction modulation is presented and evaluated. The gate metal workfunction is ...
Analysis of total ionizing dose response of ... Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology.
Abstract. The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction modulation is presented and evaluated.
Missing: bulk P- technology.