The B becomes larger as the oxide thickness is decreased. This is a statistical consequence of the number of defects for breakdown becoming less for thinner ...
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We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the ...
Ultrathin gate oxide reliability: physical models, statistics, and ...
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Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and ...
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We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the ...
Feb 1, 2004 · In fact, IC manufacturers can extend chip reliability by allowing multiple gate oxide breakdown events to occur before considering the life of ...
When the intrinsic lifetime of the thin oxide is barely long enough to meet reliability requirements of IC's, it is obvious that they are also least able to ...
Ultra-thin oxide reliability for ULSI ... In this article, we critically examine the limit of gate oxide scaling from a reliability point of view.
Jan 18, 2006 · Abstract - The reliability of the gate oxide in microelectron- ics, i.e., the ability of a thin film of this material to retain its excel-.
Reliability Characterization of Ultra-Thin Film Dielectrics
pubs.aip.org › article-pdf › 115_1_online
The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in advanced CMOS technologies.
It is shown that oxide breakdown can still occur at low voltages in the direct tunneling regime under the condition of electron injection from the poly-Si gate.