The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation ...
The effect of a SiO2 gate dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based organic ...
The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation ...
The effect of (NH4)2Sx treatment on the surface properties of SiO2 is studied. (NH4)2Sx treatment leads to the formation of S-Si bonds on the SiO2 surface ...
A sulfurated layer between pentacene and SiO2 is expected to give significant contributions to carrier transport for pentacene/SiO2-based OTFTs. Export citation ...
Jan 17, 2018 · The effect of a gate SiO2 dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based ...
Jan 4, 2018 · Effects of (NH4)2Sx treatment on the surface properties of SiO2 as a gate dielectric for pentacene thin-film transistor applications. To cite ...
Aug 24, 2010 · Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2S treatment.
Missing: 2Sx | Show results with:2Sx
Pentacene-based thin film transistors (TFTs) have been fabricated and analyzed to investigate the temperature and electric field dependence of hole mobility ...
Missing: modified (NH4) 2Sx treatment.
Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2Sx treatment · Y. LinC. Hung. Materials ...
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