With TCAD simulation, we demonstrate that n-type power device HCI can be significantly improved by optimizing source/drain implantation without performance ...

With TCAD simulation, we demonstrate that n-type power device HCI can be significantly improved by optimizing source/drain implantation without performance ...

Mar 31, 2019 · With TCAD simulation, we demonstrate that n-type power device HCI can be significantly improved by optimizing source/drain implantation without ...

With TCAD simulation, it is demonstrated that n-type power device HCI can be significantly improved by optimizing source/drain implantation without performance ...

Y. Hu's 4 research works with 64 citations, including: TCAD Simulation on FinFET n-type Power Device HCI Reliability Improvement.

Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during ...

Apr 8, 2024 · This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN metal ...

Sentaurus TCAD version M-2016.12-SP1. Sentaurus is accurate tool that has been used to investigate reliability in FinFET and planar devices [14]. The 3-D ...

FinFET transistors are calibrated with Intel 14-nm FinFET technology. Our TCAD simulation framework determines accurately the temperature and NBTI degradation.

We demonstrate that fin narrowing suppresses the output conductance degradation due to the substrate effect in the high-frequency range such that self-heating ...