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Jan 25, 2024 · β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection.
Jan 25, 2024 · β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection.
The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and ...
The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and ...
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has ...
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has ...
The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and ...
The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and ...
Sol-Gel Synthesized Amorphous (InxGa1-x)2O3 for UV Photodetection with High Responsivity. ... Shengping Ruan, Jingran Zhou: A High-Performance UVA Photodetector ...
We prepared (Ga1−xInx)2O3 thin films at 900 °C using a sol–gel method, from a 2-methoxyethanol solution of gallium isopropoxide and indium isopropoxide ...