Abstract: This paper reviews a 0.13 μm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies f max of 500 GHz, ...
This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f ...
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[PDF] SiGe BiCMOS for Analog, High-Speed Digital and Millimetre ...
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Abstract — This paper explores the application of. SiGe BiCMOS technology to mm-wave transceivers with analog and digital signal processing. A review of 10-.
Jan 7, 2021 · The section IV presents BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical ...
This paper reviews a 0.13 μm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies fmax of 500 GHz, transit frequencies fT ...
This paper reviews a 0.13 μm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies fmax of 500 GHz, transit frequencies fT ...
Dec 14, 2024 · We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line.
Abstract. Phased array systems have been used to achieve electronic beam control and fast beam scanning. In the RF-phase shifting architecture, ...
In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequencies, then at sub-THz and THz range.
This platform is also perfectly suited for mm-wave phased array applications due to its low noise performance for receivers (< 1.3dB at 40GHz), high dynamic ...
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