Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The ...
This work aims to fill this gap by a detailed study of SH effect in 28 FDSOI UTBB technology at cryogenic tempe- ratures down to 77 K. Firstly, the impact of SH ...
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K.
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K.
The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of ...
This paper is an extended version of our work [21] , in which the variation of analog FoMs due to self-heating in 28nm FDSOI UTBB CMOS technology is ...
Jun 3, 2020 · This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures ...
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Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. L. Nyssens, A. Halder, B. Esfeh, N. Planes, M. Haond, D. Flandre, J. Raskin, and V. Kilchytska.
We investigate the temperature rise caused by self-heating and evaluate the thermal resistance as functions of ambient temperature and dissipated power, taking ...
Self-heating in FDSOI is expected to be aggravated due to thin Si film with poorer thermal properties than Si bulk and by a presence of the buried oxide (BOX) ...