Did you mean: Self-Aligned Gate Thin-Channel β-Ga2O3 MOSFETs.
It possesses a bandgap and expected critical field strength of ~4.8 eV and ~8 MV/cm, respectively, surpassing the same measured characteristics of GaN and SiC [ ...
Mar 11, 2024 · Abstract— We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 MOSFETs as a path toward eliminating source access resistance for ...
β-Ga2O3 is amenable to Si ion-implant; therefore, it is the only semiconductor material with a band gap larger than SiC that can be designed with a self-aligned ...
Beta-phase gallium oxide has shown promise as a next-generation wide-bandgap semiconductor for use in power electronics. It possesses a bandgap and expected ...
Jul 17, 2024 · Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates. Article. Full-text available. Oct 2019; APEX · Kyle J. Liddy ...
Oct 10, 2019 · The device has a maximum transducer gain, maximum output power, and peak power added efficiency of 13 dB (15 dB), 715 mW/mm (487 mW/mm), and ...
Beta-phase gallium oxide $(\beta-\mathrm{Ga}_{2}\mathrm{O}_{3})$ has shown promise as a next-generation wide-bandgap semiconductor for use in power ...
Aug 30, 2024 · In this work, we present a high band alignment recessed-gate E-mode lateral HJ-FET design scheme. The device can realize the transition from D- ...
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What is self aligned gate technology?
May 4, 2023 · Fully self- aligned gate43 FETs can also significantly improve RF performance because of reduced access resistance. Huang's material figure of ...
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates. KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics ...