Jan 17, 2013 · This paper proposes a technique to accurately estimate the stability of a conventional SRAM cell without modifying the cell structure. The main ...
Abstract—Static noise margin is one of the key metrics to estimate the likelihood of failure of a 6T-static random-access memory (SRAM) cell.
This paper proposes a technique to accurately estimate the stability of a conventional SRAM cell without modifying the cell structure to measure the ...
This paper proposes a technique to accurately estimate the stability of a conventional SRAM cell without modifying the cell structure. The main idea is to ...
The measured currents are used to estimate the read stability and the write ability through a nonlinear regression. In the conventional 6T SRAM cell, stability.
This paper analyzes the read stability N-curve metrics and compares them with the commonly used static noise margin (SNM) metric defined by Seevinck, ...
The effect of supply voltage, transistor scaling, word line voltage, threshold voltage, and temperature on SRAM stability is analysis in Standby and Read. Mode.
SRAM stability margin or the Static Noise Margin (SNM) is projected to reduce by 4X as scaling progresses from 250 nm CMOS technology down to 50 nm technology.
Stability Estimation of a 6T-SRAM Cell Using a Nonlinear Regression. Article ... estimate the read stability and the write ability through a nonlinear regression.
The main purpose of this paper is to simulate 6T SRAM to evaluate the performance at different CMOS technology nodes (180 nm, 90 nm, 65 nm, 45 nm)
Missing: Estimation Nonlinear Regression.