The Ni/AlOx/Pt devices demonstrate more stable performance with lower SET and RESET operation voltages (<; 1.3 V), larger on/off ratio (>10 3 ), longer ...
Abstract—Solution-processed AlOx thin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN ...
Solution-processed AlOxthin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN as the top ...
Compared with the unsubstituted devices, the HfO₂-based RRAM devices with TiN and TiO x N y electrodes devices showed good resistive switching performance and ...
Oct 22, 2024 · This paper reports on resistive switching behavior observed in resistive random access memory (RRAM) devices fabricated with aluminum oxide ...
Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method. Solid State Electron. 2019;158:28–36 ...
An overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) ...
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Performance variation of solution-processed memristor ...
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Compared with TiN/AlOx/Pt RRAM devices, Ni/AlOx/Pt RRAM devices annealed at each temperature showed better characteristics with lower operating voltage and ...
Solution-processed AlOxthin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN as the top ...
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature ... Sun, The resistive switching characteristics of TiN/HfO2/Ag RRAM ...