However, using the global RC for high-bandwidth STT-RAMs causes a droop effect and coupling noise effect, leading to the significant performance degradation.

However, using the global RC for high-bandwidth STT-RAMs causes a droop effect and coupling noise effect, leading to the significant performance degradation.

The local RC and various global RCs are introduced, and compared in aspects of area, sensing time, and power consumption, and the following requirements of ...

PDF | On Jul 1, 2015, Byungkyu Song and others published Reference-Circuit Analysis for High-Bandwidth Spin Transfer Torque Random Access Memory | Find, ...

A global reference-circuit (RC), which means one RC is shared with many sensing circuits (SC), is being considered for high-bandwidth STT-RAMs because of ...

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory ... analysis for high-bandwidth spin transfer torque random access memory.

This chapter deals with MRAM technology based on spin-transfer torque (STT) and the prospect of new directions in VLSI made possible by the technology.

Abstract—We proposed a novel self-reference sensing scheme for. Spin-Transfer Torque Random Access Memory (STT-RAM) to overcome the large bit-to-bit ...

Mar 13, 2021 · In this work, we analyzed the effect of radiation on the STT-RAM sense circuit and proposed a radiation hardened circuit. The sense circuit is ...

May 10, 2021 · The emerging in-memory computing (IMC) approach addresses this issue and facilitates the movement of significant data and rapid computations.