Abstract: AlGaN channel transistors are promising candidates for high power RF transistors due to their superior material properties.
Here, we show significantly better small and large signal RF performance than what have been reported on high Al-composition. AlGaN transistors with regrown ...
Materials Science · HFETs. Conference Paper. RF Performance of 130 nm Al 0.75 Ga 0.25 N/Al 0.6 Ga 0.4 N HFETs with MBE-Regrown Contacts. June 2019. DOI:10.1109 ...
Missing: 75Ga0. 25N/ 6Ga0. 4N
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. Hao Xue, Choong-Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah ...
75Ga0.25N/Al0.6Ga0.4N HFET with MBE regrowth contacts and 130 nm T-gates. The device exhibited an RF output power of 1.8. W/mm at 10 GHz. To our knowledge ...
Maximum drain current density (I D, max) of 460 mA mm− 1 was obtained on transistors with gate length of 130 nm. The small signal measurement shows current/ ...
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. DRC 2019: 157-158. [+][–]. 2000 – 2009. FAQ. see FAQ. What is the meaning of ...
Oct 7, 2024 · RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. ... All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs.
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown ContactsHao Xue, Choong-Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah ...
RF Performance of 130 nm Al 0.75 Ga 0.25 N/Al 0.6 Ga 0.4 N HFETs with MBE-Regrown Contacts · Hao Xue,Choong Hee Lee,Kamal Hussian,Towhidur Razzak,Mamun Abdullah ...