Biography. Runtao Ning (S'16) received the B.E. degree in electronic science and technology and the M.S. degree in microelectronics from Liaoning University, ...
This letter proposes a new shield gate (SG) trench MOSFET structure, which utilizes a p-n-doped polysilicon refill as the SG electrode to minimize the total ...
Illinois Institute of Technology Graphic · 美国伊利诺伊理工大学. 2014 - 2018. power device design，application and very good at TCAD simulation.
Student at Illinois Institute of Technology · Education: Illinois Institute of Technology · Location: Greater Chicago Area · 20 connections on LinkedIn.
This paper investigates the concept of using depletion-mode n-channel MOSFET (D-MOS) as RF transmitter/receiver switch. A new TCAD modeling methodology to ...
Runtao Ning, Tianjiao Liu, Z. Shen; Published in IEEE Electron Devices… 1 February 2017; Engineering, Physics. This paper investigates the concept of using ...
Runtao Ning · John Shen · View · A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using ...
During more than a decade's great effort, with our active investment in human resource, Runtao has built up our own brand --- Hua Ning Screw. The factory ...
Phantom study of a fully automatic radioactive seed placement robot ...
pubmed.ncbi.nlm.nih.gov › ...
Apr 5, 2024 · This study presents an innovative, fully automated radioactive particle implantation system utilizing the Remebot device, ...