Affiliation: Kioxia Corporation, Institute of Memory Technology Research & Development, Yokkaichi, Mie, Japan. Publication Topics: Charge Trapping, Non- ...
Keiji HOSOTANI | Cited by 117 | of Toshiba Corporation, Tokyo | Read 19 publications | Contact Keiji HOSOTANI.
We have developed a novel method and model to describe the switching and degradation phenomena of uni-polar type ReRAM using conventional electric field ...
Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers, Yuji Komatsu Yuji Komatsu, Keiji Hosotani Keiji Hosotani, Takashi Fuyuki Takashi
Heteroepitaxial growth of InGaP for extremely high-efficiency 2-terminal tandem solar cell with Si ; Yuji Komatsu ; Keiji Hosotani ; Takashi Fuyuki ; Hiroyuki ...
Inventors: · Hosotani, Keiji Minato-ku, Tokyo 105-8001 (JP); Sunouchi, Kazumasa Minato-ku, Tokyo 105-8001 (JP) ...
Keiji Hosotani , Takashi Fuyuki , Hiroyuki Matsunami. Show more. Add to ... Heteroepitaxial growth of InGaP on Si with InGaP/GaP step-graded buffer layers. 1997, ...
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Japanese Journal of Applied Physics, Volume 49, Number 4S Citation Keiji Hosotani et al 2010 Jpn. J. Appl. Phys. 49 04DD15 DOI 10.1143/JJAP.49.04DD15.
Session Chair: Ken Takeuchi (The Univ. of Tokyo), Keiji Hosotani (KIOXIA Corp.) PDF Download Download PDF.