Our results show that the TDDB lifetimes of the devices increased after proton irradiation and the amplitude increased with the intensification of the total ...
Our results show that the TDDB lifetimes of the devices increased after proton irradiation and the amplitude increased with the intensification of the total ...
Our results show that the TDDB lifetimes of the devices increased after proton irradiation and the amplitude increased with the intensification of the total ...
). More interestingly, the TDDB lifetimes are also sim- ilar under the same TID (500krad (SiO2)) damage conditions caused by proton irradiation. The TDDB.
Missing: growth | Show results with:growth
Jun 23, 2017 · It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a ...
Missing: growth | Show results with:growth
Aug 30, 2022 · Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectron. Reliab. 2018 ...
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectron. Reliab. 81: 112-116 (2018) ...
Jul 27, 2023 · Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectron. Reliab. 2018 ...
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Article. Feb 2018. Teng Ma ...
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Article. Feb 2018. Teng Ma ...