We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS) FET hot-carrier relia-bility.
We discuss the models used in state- of-the-art hot-carrier simulation flows, anneal measurements to probe hot-carrier induced interface defects, the validity ...
Request PDF | On Mar 1, 2023, Michiel Vandemaele and others published Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD ...
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. Michiel Vandemaele 1. ,. Ben Kaczer 1. ,. Erik ...
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. M. Vandemaele, B. Kaczer, E. Bury, ...
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations ; Authors. Vandemaele, Michiel; Kaczer, Ben; Bury, Erik; Franco, ...
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... Investigating Nanowire, Nanosheet and Forksheet FET Hot Carrier Reliability via TCAD Simulations. Neuromorphic Computing Reliability, Martin Frank (IBM Research) ...
Aug 5, 2024 · Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS 2023: 1-10. [+] ...
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. Conference Paper. Mar 2023.