Jul 7, 2017 · We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into ...

We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node ...

This late-TSV-middle approach offers the ability to build 3D technology into commercially available 90nm-node CMOS, while avoiding many of the challenges ...

Bibliographic details on Front-side mid-level Tungsten TSV integration for high-density 3D applications.

Front-side mid-level Tungsten TSV integration for high-density 3D applications. 3DIC 2016: 1-4. [+][–]. Coauthor network. maximize. Note that this feature is a ...

Front-side mid-level Tungsten TSV integration for high-density 3D applications. Conference Paper. Nov 2016. Brian Mattis · Lovelace Soirez · Catherine Bullock ...

In this study, a novel hollow tungsten TSV (W–TSV) is presented and developed. The hollow structure provides space for the release of thermal stress.

Fine-pitch TSV-technology allows arrays of e.g. 5x5 TSVs which reduce the insertion loss at 10 GHz down to 0.014 dB per transition. Page 27. © Fraunhofer. Top- ...

Oct 22, 2024 · Tungsten through-silicon via (W-TSV) technology is investigated for the fabrication of three-dimensional (3D) LSI chips having low-resistive ...

High density TSV (via first) still on the roadmap. (no large volume products yet). Several R&D projects in HEP (and photon science) exist. (FERMILAB 3DIC, AIDA ...