Dec 15, 2008 · Full-band Monte Carlo simulation offers a very accurate simulation technique, but is often limited by its high demand on computation time.

This allows accurate treatment of hot carrier effects in semiconductors. In this work we outline an efficient full-band Monte Carlo (FBMC) simulator and ...

In this work we outline an efficient full-band Monte Carlo (FBMC) simulator and investigate the accuracy of simulation results for different meshing approaches ...

Karlowatz, G., Wessner, W., & Kosina, H. (2008). Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.

Karlowatz, G., Wessner, W., & Kosina, H. (2006). Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.

The states for valence electrons are solved, and as outcome of the program we obtain the eigenvalues corresponding to valence and conduction bands. Band ...

Kosina. Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation. In 5th IMACS Symposium on Mathematical Modelling - 5th ...

May 24, 2012 · A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model.

Here we will review the hierarchy of physical models which have been developed to include the full details of the bandstructure into Monte Carlo models, and we ...