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The goal of this thesis is to design and fabricate bulk Si/SiGe heterostructure nano scale p-MOSFETs and characterize their performance. In designing the sub- ...
Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET . Lee, Jae-kyu, Ph. D. Massachusetts Institute of Technology (Massachusetts ...
In a properly designed MOSFET inversion should take place in SiGe channel first and at a more negative voltage in the parasitic Si channel. Figure 2.4 ...
Mar 27, 2024 · In this work, the impact of heterostructure composition and SiGe channel thickness on the electrical characteristics of p-MOSFET are studied.
[PDF] Enhanced Performance in Sub-100 nm CMOSFETs Using Strained ...
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We report the demonstration of a novel sub-100 nm. CMOS technology with strained-Si0.76Ge0.24/Si hetero- structure channels formed by ultra-high-vacuum ...
This paper investigates scaled sub-100 nm strained Si channel p-type MOSFETs. For a 30–40% Ge content SiGe buffer, 1D Poisson-Schrödinger analysis indicates ...
In sub-100 nm MOSFETs, however, severe short channel effects, direct tunneling gate current and the lower limit of supply voltage due to finite Si band bending ...
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High mobility heterojunction transistor (HMHJT). • A Si/SiGe/Si quantum well is used to increase the drive current. • The bulk punchthrough, DIBL and ...
During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions.
Apr 4, 2024 · Most studies of Si/SiGe heterojunction have favored the use of hologram with a fringe spacing of 2 nm to achieve a spatial resolution of 4–6 nm ...