Abstract: An analytic model of the double-gate Si-based tunneling field effect transistor from source to drain is proposed. The Poisson equation is used to ...

In this paper, we present an exponential energy band model from source to drain for TFET. Considering the influence of source/drain doping on the bending of the ...

In this paper the analytical channel potential solution and short-channel effect model are derived for sub-100 nm MOSFET with graded junction and halo doped ...

Publications (3) · An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier November 2021 · An Accurate Analytical ...

Nov 6, 2023 · Bibliographic details on An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier.

An Analytical Model of Energy Band Considering Drain Doping Effect of TFET with Exponential Barrier Qiao He, Qian Xie, Meng Zhao, Zixuan Yang, Zheng Wang.

Jul 27, 2011 · We present the first analytical model to include the impact of the drain voltage on the TFET performance. The model is developed for both a pure ...

Band-to-Band Tunneling is a process in which electrons tunnel from the valence band through the semiconductor bandgap to the conduction band or vice versa.

The semi-classical current transport model is used in this study to examine the drain current model for Double-Gate (DG) Dual-Material-Gate (DMG) ...

An accurate analytical model is presented for drain current of the heterojunction tunneling field effect transistor, taking into account the source ...