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In this paper recent advances in multi-gate MOSFET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC ...
Abstract— In this paper recent advances in Multi-Gate MOS-. FET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile ...
In this paper recent advances in Multi-Gate MOS-FET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC ...
The first step to develop a compact model is to consider a well behaved device, with good electrostatic control by the vertical field (from the gate) and ...
Missing: Circuit | Show results with:Circuit
This Chapter describes the interrelationship between the multi-gate FET device properties and elementary digital and analog circuits, such as CMOS.
Multi-Gate Field Effect Transistors (MuGFET) such as FinFETs and Triple-Gate FETs are the most promising device structures for sub-45nm CMOS technology nodes.
Advances in Multi-Gate MOSFET Circuit Design. Fulde, M., Arnim, K.v., Pacha, C., Bauer, F., Russ, C., Siprak, D., Xiong, W., Marshall, A., Cleavelin, C.R., ...
For the first time, this paper reports a comprehensive review on the effect of gate and channel engineering on the characteristics of multigate MOSFETs. It is ...
The main aim of this chapter is to highlight the performance comparison of bulk FinFET and SOI FinFET depending on different doping profile and device ...