In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates is proposed and studied with ...

6 days ago · In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates is ...

Jul 9, 2024 · Abstract—In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates ...

Apr 11, 2024 · In this work, hierarchically porous nitrogen and sulfur dual-doped carbon nanosheet networks (N,S-HPC) were facilely synthesized by pyrolysis of ...

6 days ago · Title: A novel nanosheet reconfigurable field effect transistor with dual-doped source/drain. Authors: Bin Lu, Xiaotao Liu, Zhu Li, Jiayu Di, ...

-In this paper, a reconfigurable field-effect transistor (RFET) with dual-doped nanosheet architecture and triple independent gates is proposed and studied with ...

根据不同的编程偏置，所提出的RFET 可以表现为n/p 型MOSFET 或n/p 型隧道FET (TFET)。对装置机理和关键装置参数的影响进行了全面的研究。各种指标，例如通态 ...

In this study, a reconfigurable field-effect transistor has been developed utilizing a multi-doped source-drain region, enabling operation in both n-mode and p ...

In this article, a novel reconfigurable field-effect transistor with an asymmetric underlap channel extension at drain side (UCED-RFET) is proposed for the ...

In [21], a novel reconfigurable field effect transistor is introduced, which is based on a dual doped source/drain region. This device incorporates three gates,.