Dec 21, 2021 · For demonstration, one prototype is implemented using a 100-nm GaN-on-Si process. Over 18-dB return loss, 1.7-dB minimum insertion loss ( ...
This article presents a Ka-band switchable filtering power combiner monolithic microwave integrated circuit (MMIC), which unifies the functionalities of the ...
A single-pole single-throw switch monolithic microwave integrated circuit using 0.25 μm GaN HEMT technology is presented for Ka-band downlink frequencies 17 ...
A SiGe 77 GHz power amplifier driver combining two three-stage amplifier MMIC is reported. The measured small signal gain of the chip varies from 16 to 18 dB ...
Missing: Switchable | Show results with:Switchable
Jun 18, 2024 · GaN-on-SiC MMIC Ka-band power amplifier: This demonstration showcases a 6W driver and a 10W PA operating in the 33–37GHz band. These parts ...
Jun 13, 2024 · GaN-on-SiC MMIC Ka-Band Power Amplifier: This demonstration showcases a 6 W driver and a 10 W PA operating in the 33 to 37 GHz band. These ...
A Ka-Band High-Power Switchable Filtering Power Combiner MMIC in 100-nm GaN-on-Si. IEEE Transactions on Industrial Electronics. 2022-10 | Journal article. DOI ...
Sep 17, 2024 · C-Band 100 W GaN-on-SiC Power Amplifier with 57% Power Added Efficiency (PAE): Combining high gain and efficiency, this compact GaN Power ...
This article presents an analytical design for millimeter-wave monolithic microwave integrated circuit (MMIC) switches.
Jun 21, 2024 · GaN-on-SiC MMIC Ka-Band Power Amplifier: This demonstration showcased a 6 W driver and a 10 W PA operating in the 33 to 37 GHz band. These ...