Sep 18, 2018 · Abstract: A fully integrated D-band transceiver front-end with on-chip frequency synthesizer is implemented in 65-nm CMOS.

A fully integrated D-band transceiver front-end with an on- chip frequency synthesizer was presented. The chip has been implemented in 65-nm CMOS. The dual- ...

The paper describes two approaches to achieve multi-band modulators and demodulators for direct conversion architecture. One is a 45-degree phase-shifter CMOS ...

This paper presents the first 64-QAM 60-GHz CMOS transceiver, which achieves a TX-to-RX EVM of -26.3 dB and can transmit 10.56-Gb/s in all four channels ...

Sep 4, 2015 · This paper presents the first 150 GHz amplifier in a digital 65 nm CMOS technology. Design techniques to preserve raw transistor gain near ...

Dec 11, 2009 · This paper presents design considerations and experimental characterization for a 150 GHz amplifier in a digital 65 nm. CMOS technology [8]. A ...

This paper demonstrates a 240GHz wideband QPSK receiver in 65nm bulk CMOS implemented with a direct-conversion mixer-first architecture, which achieves a ...

Jun 11, 2023 · A front-end chip prototype fabricated in TSMC's. 65 nm CMOS process operating between 5–6 GHz and occupying the area of 1.2 mm2 achieves 19.5.

Jun 16, 2024 · Abstract: This paper presents a 27.7–31.2 GHz highly integrated 8-element 4-beam transmitter front end in 65-nm CMOS for phased-array ...

A Fully Integrated 150-GHz Transceiver Front-End in 65-nm CMOS. IEEE ... A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications.