A 7F/sup 2/ DRAM trench cell and corresponding vertically folded bitline (BL) architecture has been fabricated using a 0.175 /spl mu/m technology.
Jan 1, 2000 · A 7F2 DRAM trench cell and corresponding vertically folded bitline (BL) architecture has been fabricated using a 0.175 p,m technology.
A 7F<sup>2</sup> DRAM trench cell and corresponding vertically folded bitline (BL) architecture has been fabricated using a 0.175 μm technology.
The presented scheme minimizes local well noise by maximizing the number of twisting intervals. A significant improvement of signal margin was measured on a 32- ...
A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs ... cell and bitline architecture featuring ...
Hoenigschmid, A 7F2 cell and Bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's, IEEE J. Solid State ...
1.2.4 Open/Folded DRAM Array Architectures ... 7F2 Cell and Bitline Architecture Featuring Tilted Array Devices and Penalty-Free Vertical BL Twists for 4Gb
A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs. Authors: Heinz Hoenigschmid, Alexander ...
13-2 A 7F2 Cell and Bitline Architecture Featuring Tilted Array Devices and Penalty-Free. Vertical BL Twists for 4Gb DRAM's. H. Hoenigschmid, A. Frey*, J ...
A 7f2 Cell And Bitline Architecture Featuring Tilted Array Devices And Penalty-Free Vertical Bl Twists For 4-Gb Dram'S (Article) Subject: 4 Gb , Dram , Vertical ...