Abstract: This paper describes the key technologies used in a 1-Gb synchronous DRAM. This DRAM was developed according to a new cell-operating concept in ...

In this 1 Gb synchronous DRAM, the bitline precharge level is Vss (ground). The word line reset level is -0.5 V to prevent cell leakage current while reducing ...

A dramatic reduction of the internal operating voltage and a high-speed clocking technique are the keys to low-power, high-speed memory technologies.

Article "A 1Gb SDRAM with Ground Level Precharged Bit Line and Non-Boosted 2.1V Word Line." Detailed information of the J-GLOBAL is an information service ...

“A 1-Gb SDRAM with Ground-Level Precharged Bi Line and Nonboosted 2.1-V Word Line”; IEEE Journal of Solid-State Circuits, Vol. 33, No. 11, November 1998 pp ...

A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. Article. Dec 1998. Satoshi Eto · M. Matsumiya · Masato Takita · M. Taguchi.

Non-Patent Citations (1). Title. Eto, S. et al., "A 1-Gb SDRAM with Ground-Level Precharged Bit Line and Nonboosted 2.1-V Word Line", IEEE Journal of Solid- ...

A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line · Masato Matsumiya,Masato Takita,Yuki Ishii,T. ; A 40ns 64Mb DRAM With Current- ...

1. The. RSDLL is used to increase the valid output data ... Taguchi, “A 1Gb SDRAM with ground level precharged bitline and non-boosted 2.1V word line,”.

A 1 Gb SDRAM with ground level precharged bitline and non-boosted 2.1 V word line ... A 245.7 mm/sup 2/ 256 Mb SDRAM uses: (1) 60.2% cell-occupancy ratio ...