NBTI causes increase of Vt of the PMOS transistors, thus leading to timing degradation of CMOS circuits over time. This manuscript presents a NBTI-aware ...

NBTI causes increase of Vt of the PMOS transistors, thus leading to timing degradation of CMOS circuits over time. This manuscript presents a NBTI-aware ...

This manuscript presents a NBTI-aware transistor sizing technique for high-performance CMOS gates, which improves the cell reliability with minimum area penalty ...

This manuscript presents a NBTI-aware transistor sizing technique for high-performance CMOS gates, which improves the cell reliability with minimum area ...

NBTI causes increase of Vt of the PMOS transistors, thus leading to timing degradation of CMOS circuits over time. This manuscript presents a NBTI-aware ...

NBTI-aware technique for transistor sizing of high-performance CMOS gates ; Estimation of statistical variation in temporal NBTI degradation and its impact on ...

Apr 30, 2020 · This study presents a negative bias temperature instability (NBTI) mitigation design technique for CMOS 6T-static random access memory (6T-SRAM) cells.

本文提出了一种用于高性能CMOS栅极的nbti感知晶体管尺寸技术，该技术以最小的面积损失提高了电池的可靠性。使用我们的方法，在32nm技术上设计的逆变器的延迟在第3年比传统 ...

SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data.

Negative Bias Temperature Instability (NBTI) in PMOS transistors has be ome a major reliability on ern in nanome- ter s ale design, ausing the temporal ...