Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically.
Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically.
The GaAs channel forms a quantum well between the AlGaAs layers. The AlGaAs spacers are optimized for high electron transfer from the supply layers into the ...
During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate ...
Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically.
In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed.
Advanced circuits based on metamorphic HEMT (MHEMT)technologies on 4 ”GaAs substrates for both millimeter-wave,and mixed- signal applications are presented ...
Advanced circuits based on metamorphic HEMT (MHEMT)technologies on 4 ”GaAs substrates for both millimeter-wave,and mixed- signal applications are presented.
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on. 4” GaAs substrates for both millimeter-wave, and mixed- signal applications ...
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Abstract: Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both millimeter-wave and mixed-signal applications ...